The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 2008
Filed:
Jul. 12, 2004
Ken Yoshizawa, Niigata, JP;
Ken Yoshizawa, Niigata, JP;
Shin-Etsu Handotai Co., Ltd., Tokyo, JP;
Abstract
The present invention are a method for producing a silicon wafer having a crystal orientation <110> from a silicon single crystal ingot grown by a Floating Zone method (FZ method), wherein, at least, an FZ silicon single crystal ingot is grown by being made to be dislocation-free by Dash Necking method using a seed crystal having its crystal axis inclined at a specified angle from a crystal orientation <110>, and the grown FZ silicon single crystal ingot is sliced at the just angle of a crystal orientation <110> to produce a silicon wafer having a crystal orientation <110>, and a silicon wafer produced by the method. Thereby, there are provided a method for producing a silicon wafer having a crystal orientation <110> from a silicon single crystal ingot made to be dislocation-free at a high success rate by using Dash Necking method by FZ method, and a silicon wafer having an crystal orientation <110>.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile