The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 15, 2008

Filed:

Jan. 26, 2006
Applicants:

Marco Sforzin, Cantu′, IT;

Nicola Del Gatto, Torre Del Greco, IT;

Marco Ferrario, Milan, IT;

Emanuele Confalonieri, Milan, IT;

Inventors:

Marco Sforzin, Cantu′, IT;

Nicola Del Gatto, Torre Del Greco, IT;

Marco Ferrario, Milan, IT;

Emanuele Confalonieri, Milan, IT;

Assignee:

STMicroelectronics S.r.l., Agrate Brianza, IT;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01); G11C 16/04 (2006.01); G11C 11/4063 (2006.01); G11C 11/4091 (2006.01); G11C 11/24 (2006.01); G11C 7/06 (2006.01);
U.S. Cl.
CPC ...
Abstract

A memory device includes a plurality of memory cells each one for storing a value, at least one reference cell, biasing means for biasing a set of selected memory cells and the at least one reference cell with a biasing voltage having a substantially monotone time pattern, means for detecting the reaching of a threshold value by a current of each selected memory cell and of each reference cell, and means for determining the value stored in each selected memory cell according to a temporal relation of the reaching of the threshold value by the currents of the selected memory cell and of the at least one reference cell. The biasing means includes means for applying a controlled biasing current to the selected memory cells and to the at least one reference cell.


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