The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 2008
Filed:
Aug. 23, 2005
Frank W. Hawley, Campbell, CA (US);
A. Farid Issaq, Campbell, CA (US);
John L. Mccollum, Saratoga, CA (US);
Shubhra M. Gangopadhyay, Lubbock, TX (US);
Jorge A. Lubguban, Lubbock, TX (US);
Jin Miao Shen, Austin, TX (US);
Frank W. Hawley, Campbell, CA (US);
A. Farid Issaq, Campbell, CA (US);
John L. McCollum, Saratoga, CA (US);
Shubhra M. Gangopadhyay, Lubbock, TX (US);
Jorge A. Lubguban, Lubbock, TX (US);
Jin Miao Shen, Austin, TX (US);
Actel Corporation, Mountain View, CA (US);
Abstract
A metal-to-metal antifuse having a lower metal electrode, a lower thin adhesion promoting layer disposed over the lower metal electrode, an amorphous carbon antifuse material layer disposed over the thin adhesion promoting layer, an upper thin adhesion promoting layer disposed over said antifuse material layer, and an upper metal electrode. The thin adhesion promoting layers are about 2 angstroms to 20 angstroms in thickness, and are from a material selected from the group comprising SiCand SiN. The ratio of x to y in SiCis in a range of about 1+/−0.4, and the ratio of x to y in SiNis in a range of about 0.75+/−0.225.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile