The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 2008
Filed:
Mar. 08, 2007
Delbert R. Cecchi, Rochester, MN (US);
Toshiharu Furukawa, Essex Junction, VT (US);
Jack Allan Mandelman, Flat Rock, NC (US);
Delbert R. Cecchi, Rochester, MN (US);
Toshiharu Furukawa, Essex Junction, VT (US);
Jack Allan Mandelman, Flat Rock, NC (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A triple-well CMOS structure having reduced latch-up susceptibility and a method of fabricating the structure. The method includes forming a buried P-type doped layer having low resistance under the P-wells and N-wells in which CMOS transistors are formed and forming a gap in a buried N-type doped layer formed in the P-wells, the is gap aligned under a contact to the P-well. The buried P-type doped layer and gap in the buried N-type doped layer allow a low resistance hole current path around parasitic bipolar transistors of the CMOS transistors.