The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 2008
Filed:
Jun. 07, 2004
Jen-yao Hsu, Hsinchu Hsine, TW;
Jen-Yao Hsu, Hsinchu Hsine, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A HV-MOS device is described, including a substrate, a gate dielectric layer and a gate, a channel region, two doped regions as a source and a drain, a field isolation layer between the gate and at least one of the two doped regions, a drift region and a modifying doped region. The drift region is located in the substrate under the field isolation layer and connects with the channel region and the at least one doped region. The modifying doped region is at the periphery of the at least one doped region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile