The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 2008
Filed:
Apr. 19, 2006
Hyo-sug Lee, Suwon-si, KR;
Sung-hoon Lee, Yongin-si, KR;
Young-gu Jin, Hwaseong-si, KR;
Jong-seob Kim, Suwon-si, KR;
Sung-il Park, Suwon-si, KR;
Hyo-sug Lee, Suwon-si, KR;
Sung-hoon Lee, Yongin-si, KR;
Young-gu Jin, Hwaseong-si, KR;
Jong-seob Kim, Suwon-si, KR;
Sung-il Park, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A nanowire device having a structure allowing for formation of p-type and n-type doped portions in a nanowire, and a method of fabricating the same. The nanowire device includes a substrate, a first electrode layer formed on the substrate, a second electrode layer facing the first electrode layer, a plurality of nanowires interposed at a predetermined interval between the first electrode layer and the second electrode layer to connect the same, and an electrolyte containing an electrolytic salt filling spaces between the nanowires.