The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 2008
Filed:
Oct. 20, 2004
Applicants:
Michael R. T. Tan, Menlo Park, CA (US);
Ashish Tandon, Sunnyvale, CA (US);
David P. Bour, Cupertino, CA (US);
Inventors:
Michael R. T. Tan, Menlo Park, CA (US);
Ashish Tandon, Sunnyvale, CA (US);
David P. Bour, Cupertino, CA (US);
Assignee:
Avago Technologies Fiber IP Pte Ltd, Singapore, SG;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 31/0328 (2006.01); H01L 31/0336 (2006.01); H01L 31/072 (2006.01); H01L 31/109 (2006.01);
U.S. Cl.
CPC ...
Abstract
Subwells are added to quantum wells of light emitting semiconductor structures to shift their emission wavelengths to longer wavelengths. Typical applications of the invention are to InGaAs, InGaAsSb, InP and GaN material systems, for example.
Tan, Michael R. T.. (2008). Method and structure for deep well structures for long wavelength active regions (U.S. Patent No. 7358523). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7358523
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile