The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 2008
Filed:
Oct. 19, 2006
Keiichi Haraguchi, Hitachinaka, JP;
Masataka Kato, Abiko, JP;
Kenji Kanamitsu, Hitachinaka, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
A reduction in size nonvolatile semiconductors for use in a memory device and an increase in the capacity thereof are promoted. Each memory cell of a flash memory is provided with a field effect transistor having a first gate insulator film formed on a p-type well, a selector gate which is formed on the first insulator film and has side faces and a top face covered with a silicon oxide film (first insular film), floating gates which are formed in a side-wall form on both sides of the selector gate and which are electrically isolated from the selector gate through the silicon oxide film, a second gate insulator film formed to cover the silicon oxide film and the surface of each of the floating gates, and a control gate formed over the second gate insulator film.