The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 2008
Filed:
Apr. 07, 2004
Motoaki Iwabuchi, Niigata-ken, JP;
Fujio Yagihashi, Niigata-ken, JP;
Yoshitaka Hamada, Niigata-ken, JP;
Takeshi Asano, Niigata-ken, JP;
Hideo Nakagawa, Oumihachiman, JP;
Masaru Sasago, Hirakata, JP;
Motoaki Iwabuchi, Niigata-ken, JP;
Fujio Yagihashi, Niigata-ken, JP;
Yoshitaka Hamada, Niigata-ken, JP;
Takeshi Asano, Niigata-ken, JP;
Hideo Nakagawa, Oumihachiman, JP;
Masaru Sasago, Hirakata, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
Provided are a film formation composition which can produce a film having high strength and low dielectric constant, a method for manufacturing the same, a method for forming a porous film, a porous film, and a semiconductor device containing the porous film internally. More specifically provided is a film formation composition, comprising a polymer which is obtainable by hydrolysis and condensation of one or more hydrolysable silane compounds in the presence of anionic ion exchange resin, wherein the hydrolysable silane compound is selected from the group consisting of Formulae (1) and (2):(R)Si(R)  (1)(R)(R)Si—R—Si(R)(R)  (2)wherein R, Rand Reach independently represents a monovalent hydrocarbon group which may have a substituent; R, Rand Reach independently represents a hydrolyzable group; Rrepresents a divalent organic group; a represents an integer of 0 to 3; and b and c each represents an integer of 1 or 2.