The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7355883 B1

PDF
Full Text
Expired
Date of Patent:
Apr. 08, 2008

Filed:

Dec. 08, 2004
Applicants:

Shiho Okuno, Kanagawa-ken, JP;

Yuichi Ohsawa, Kanagawa-ken, JP;

Shigeru Haneda, Kanagawa-ken, JP;

Yuzo Kamiguchi, Kanagawa-ken, JP;

Tatsuya Kishi, Kanagawa-ken, JP;

Inventors:

Shiho Okuno, Kanagawa-ken, JP;

Yuichi Ohsawa, Kanagawa-ken, JP;

Shigeru Haneda, Kanagawa-ken, JP;

Yuzo Kamiguchi, Kanagawa-ken, JP;

Tatsuya Kishi, Kanagawa-ken, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A magnetoresistance effect element includes a first ferromagnetic layer (), insulating layer () overlying the first ferromagnetic layer, and second ferromagnetic layer () overlying the insulating layer. The insulating layer has formed a through hole (A) having an opening width not larger than 20 nm, and the first and second ferromagnetic layers are connected to each other via the through hole.


Find Patent Forward Citations

Okuno, Shiho. (2008). Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory (U.S. Patent No. 7355883). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7355883

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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