The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 08, 2008

Filed:

Apr. 06, 2006
Applicants:

Michael Lebby, Apache Junction, AZ (US);

Vijit Sabnis, Los Altos, CA (US);

Petar B. Atanackovic, Palo Alto, CA (US);

Inventors:

Michael Lebby, Apache Junction, AZ (US);

Vijit Sabnis, Los Altos, CA (US);

Petar B. Atanackovic, Palo Alto, CA (US);

Assignee:

Other;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/58 (2006.01);
U.S. Cl.
CPC ...
Abstract

An integrated circuit and method of fabrication including a non-semiconductor material substrate with a layer of single crystal rare earth deposited on the surface thereof. A layer of single crystal semiconductor material is grown on the layer of single crystal rare earth and an integrated circuit is formed in the layer of single crystal semiconductor material. In a preferred embodiment the single crystal semiconductor material is silicon and the integrated circuit is formed by standard semiconductor industry processes.


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