The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 08, 2008

Filed:

Mar. 19, 2002
Applicants:

Satoyuki Ojima, Annaka, JP;

Hiroyuki Ohtsuka, Annaka, JP;

Masatoshi Takahashi, Annaka, JP;

Takenori Watabe, Annaka, JP;

Inventors:

Satoyuki Ojima, Annaka, JP;

Hiroyuki Ohtsuka, Annaka, JP;

Masatoshi Takahashi, Annaka, JP;

Takenori Watabe, Annaka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0248 (2006.01); H01L 31/068 (2006.01);
U.S. Cl.
CPC ...
Abstract

An OECO solar cell using a semiconductor single crystal substrate having a plurality of grooves, wherein a minimum groove depth h of each groove always satisfies the relation of h≧Wtan θ where θ represents an angle between a line connecting the lower end, along the thickness-wise direction of the semiconductor single crystal substrate, of an electrode formed in the groove and the upper end of the inner side face of the same groove having no electrode formed thereon, and a reference line normal to the thickness-wise direction, and Wrepresents a distance between both opening edges of the groove; wherein the semiconductor single crystal substrate has thickness decreasing from a first side of a first main surface to a second side opposed to the first side; and wherein the plurality of grooves have a depth distribution of being deepest at a thickest position of the substrate, and a gradually becoming shallower towards a thinnest position of the substrate.


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