The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2008
Filed:
May. 26, 2005
Douglas D. Coolbaugh, Essex Junction, VT (US);
Ebenezer E. Eshun, Essex Junction, VT (US);
Kenneth J. Stein, Sandy Hook, CT (US);
Kunal Vaed, Poughkeepsie, NY (US);
Douglas D. Coolbaugh, Essex Junction, VT (US);
Ebenezer E. Eshun, Essex Junction, VT (US);
Kenneth J. Stein, Sandy Hook, CT (US);
Kunal Vaed, Poughkeepsie, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Methods of forming a high dielectric constant dielectric layer are disclosed including providing a process chamber including a holder for supporting a substrate, introducing a first gas comprising a high dielectric constant (Hi-K) dielectric precursor and an oxygen (O) oxidant into the process chamber to form a first portion of the high dielectric constant dielectric layer on the substrate, and switching from a flow of the first gas to a flow of a second gas comprising the Hi-K dielectric precursor and an ozone (O) oxidant to form a second portion of the high dielectric constant dielectric layer on the first portion. In an alternative embodiment, another portion can be formed on the second portion using the oxygen oxidant. The invention increases throughput by at least 20% without reliability or leakage degradation and without the need for additional equipment.