The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2008
Filed:
May. 24, 2005
Rajneesh Jaiswal, Tucson, AZ (US);
Rajneesh Jaiswal, Tucson, AZ (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
Nickel silicide contact regions are formed on a source (), drain () and polycrystalline silicon gate () of an integrated circuit transistor by annealing it after a nickel layer has been deposited on the source, drain, and gate, with no cap layer on the nickel layer. Nickel silicide bridging between the gate and source and/or drain is avoided or eliminated by using a chrome etching process to remove un-reacted nickel and nickel remnants from exposed surfaces of dielectric spacers (A,B) located between the gate and source and between the gate and drain. The chrome etching process includes use of a solution including cerric ammonium nitrate, nitric acid, and acetic acid.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile