The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2008
Filed:
Mar. 10, 2006
Colin J. Brodsky, Salt Point, NY (US);
Scott J. Bukofsky, Hopewell Junction, NY (US);
Allen H. Gabor, Katonah, NY (US);
Colin J. Brodsky, Salt Point, NY (US);
Scott J. Bukofsky, Hopewell Junction, NY (US);
Allen H. Gabor, Katonah, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Methods for applying topographically compensated film in a semiconductor wafer fabrication process are disclosed. The processes include premapping a surface of a wafer so as to determine the local topography (e.g., z-height) of the wafer and then applying a variable depth of a film to the wafer, such that the variable depth is modulated based on the local topography of the wafer. The resultant topography of the applied film and wafer is substantially planar (e.g., within approximately 100 nm) across the wafer.