The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 08, 2008

Filed:

Aug. 20, 2004
Applicants:

Tadanori Yoshioka, Tokyo, JP;

Eiichi Watanabe, Tokyo, JP;

Inventors:

Tadanori Yoshioka, Tokyo, JP;

Eiichi Watanabe, Tokyo, JP;

Assignees:

Jeol Ltd., Tokyo, JP;

Jeol Engineering Co., Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23F 1/00 (2006.01); H01J 37/08 (2006.01); C23C 16/00 (2006.01); C23C 16/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

A mask for use with a sample preparation apparatus that prepares an ion-milled sample adapted to be observed by an electron microscope is offered. It is possible to prepare the sample having a desired cross section by the use of the mask. The mask, which defines the boundary between irradiated and unirradiated regions on the sample surface, has an edge portion having an increased thickness compared with the other portions. When the edge portion of the mask is etched, the original shape is almost maintained. Thus, the side surface of the mask is kept on the center axis of the ion beam.


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