The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2008
Filed:
Jul. 09, 2004
Jun-soo Bae, Gyeonggi-do, KR;
Jang-eun Lee, Gyeonggi-do, KR;
Hyun-jo Kim, Gyeonggi-do, KR;
In-gyu Baek, Seoul, KR;
Young-ki Ha, Gyeonggi-do, KR;
Jun-Soo Bae, Gyeonggi-do, KR;
Jang-Eun Lee, Gyeonggi-do, KR;
Hyun-Jo Kim, Gyeonggi-do, KR;
In-Gyu Baek, Seoul, KR;
Young-Ki Ha, Gyeonggi-do, KR;
Abstract
Magnetic Random Access Memory (MRAM) devices include a lower electrode and a magnetic tunnel junction on the lower electrode. The magnetic tunnel junction includes a seed layer and a tunneling barrier that is oriented in a same direction as the most closely packed plane direction of the seed layer. An oxide layer may be provided between the lower electrode and the magnetic tunnel junction. The lower electrode may be a titanium-rich TiN layer having more than 50 atomic percent titanium content. Analogous fabrication methods are also described.