The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2008
Filed:
Apr. 20, 2006
Yoshihiro Ueta, Yamatokoriyama, JP;
Takayuki Yuasa, Nara, JP;
Atsushi Ogawa, Tenri, JP;
Yuhzoh Tsuda, Tenri, JP;
Masahiro Araki, Tenri, JP;
Yoshihiro Ueta, Yamatokoriyama, JP;
Takayuki Yuasa, Nara, JP;
Atsushi Ogawa, Tenri, JP;
Yuhzoh Tsuda, Tenri, JP;
Masahiro Araki, Tenri, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A nitride compound semiconductor light emitting device includes: a GaN substrate having a crystal orientation which is tilted away from a <0001> direction by an angle which is equal to or greater than about 0.05° and which is equal to or less than about 2°, and a semiconductor multilayer structure formed on the GaN substrate, wherein the semiconductor multilayer structure includes: an acceptor doping layer containing a nitride compound semiconductor; and an active layer including a light emitting region.