The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2008
Filed:
Oct. 21, 2004
Hiroki Yoshikawa, Niigata-ken, JP;
Yukio Inazuki, Niigata-ken, JP;
Satoshi Okazaki, Niigata-ken, JP;
Takashi Haraguchi, Tokyo, JP;
Yuichi Fukushima, Tokyo, JP;
Yoshihiro Ii, Tokyo, JP;
Tadashi Saga, Tokyo, JP;
Hiroki Yoshikawa, Niigata-ken, JP;
Yukio Inazuki, Niigata-ken, JP;
Satoshi Okazaki, Niigata-ken, JP;
Takashi Haraguchi, Tokyo, JP;
Yuichi Fukushima, Tokyo, JP;
Yoshihiro Ii, Tokyo, JP;
Tadashi Saga, Tokyo, JP;
Shin-Etsu Chemical Co., Ltd, Tokyo, JP;
Toppan Printing Co., Ltd, Tokyo, JP;
Abstract
In a phase shift mask blank comprising a phase shift multilayer film on a substrate, the phase shift multilayer film consists of at least one layer of light absorption function film and at least one layer of phase shift function film, and the light absorption function film has an extinction coefficient k which increases as the wavelength changes from 157 nm to 260 nm, and has a thickness of up to 15 nm. The phase shift mask blank has minimized wavelength dependency of transmittance and can be processed with a single dry etching gas.