The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2008
Filed:
Apr. 20, 2006
Jack Oon Chu, Manhasset, NY (US);
Bruce B. Doris, Brewster, NY (US);
Meikei Ieong, Wappingers Falls, NY (US);
Jing Wang, Beacon, NY (US);
Jack Oon Chu, Manhasset, NY (US);
Bruce B. Doris, Brewster, NY (US);
Meikei Ieong, Wappingers Falls, NY (US);
Jing Wang, Beacon, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
MOSFET devices suitable for operation at gate lengths less than about 40 nm, and methods of their fabrication is being presented. The MOSFET devices include a ground plane formed of a monocrystalline Si based material. A Si based body layer is epitaxially disposed over the ground plane. The body layer is doped with impurities of opposite type than the ground plane. The gate has a metal with a mid-gap workfunction directly contacting a gate insulator layer. The gate is patterned to a length of less than about 40 nm, and possibly less than 20 nm. The source and the drain of the MOSFET are doped with the same type of dopant as the body layer. In CMOS embodiments of the invention the metal in the gate of the NMOS and the PMOS devices may be the same metal.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile