The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2008
Filed:
Apr. 30, 2004
Applicants:
Cheng C. Ko, Ann Arbor, MI (US);
Barry Levine, Livingston, NJ (US);
Inventors:
Cheng C. Ko, Ann Arbor, MI (US);
Barry Levine, Livingston, NJ (US);
Assignee:
Picometrix, LLC, Ann Arbor, MI (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/732 (2006.01);
U.S. Cl.
CPC ...
Abstract
A planar avalanche photodiode includes a small localized contact layer on the top of the device produced by either a diffusion or etching process and a semiconductor layer defining a lower contact area. A semiconductor multiplication layer is positioned between the two contact areas and a semiconductor absorption layer is positioned between the multiplication layer and the upper contact layer. The photodiode has a low capacitance and a low field near the edges of the semiconductor multiplication and absorption layers.