The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2008
Filed:
Jul. 12, 2005
Shui-ming Cheng, Chu-bai, TW;
Shui-Ming Cheng, Chu-bai, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a gate dielectric over a substrate, a gate electrode over the gate dielectric, a slim gate spacer along a side of the gate electrode, and a source/drain region substantially aligned with an edge of the slim gate spacer. The source/drain region includes a first implantation region having an overlap with the gate electrode, a second implantation region further away from the channel region than the first implantation region, and a third implantation region further away from the channel region than the second implantation region. The source/drain region preferably further comprises an epitaxy region spaced apart from the slim gate spacer.