The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2008
Filed:
Mar. 03, 2005
Marie-claire Cyrille, San Jose, CA (US);
Meng Ding, Sunnyvale, CA (US);
Elizabeth Ann Dobisz, San Jose, CA (US);
Kuok San Ho, Santa Clara, CA (US);
Scott Arthur Macdonald, San Jose, CA (US);
Marie-Claire Cyrille, San Jose, CA (US);
Meng Ding, Sunnyvale, CA (US);
Elizabeth Ann Dobisz, San Jose, CA (US);
Kuok San Ho, Santa Clara, CA (US);
Scott Arthur MacDonald, San Jose, CA (US);
Hitachi Global Storage Technologies Netherlands B.V., Amsterdam, NL;
Abstract
A method for making a magnetoresistive read head so that the pinned ferromagnetic layer is wider than the stripe height of the free ferromagnetic layer uses ion milling with the ion beam aligned at an angle to the substrate supporting the stack of layers making up the read head. The stack is patterned with photoresist to define a rectangular region with front and back long edges aligned parallel to the read head track width. After ion milling in two opposite directions orthogonal to the front and back long edges, the pinned layer width has an extension. The extension makes the width of the pinned layer greater than the stripe height of the free layer after the substrate and stack of layers are lapped. The length of the extension is determined by the angle between the substrate and the ion beam and the thickness of the photoresist.