The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2008
Filed:
Feb. 22, 2005
John W. Krawczyk, Richmond, KY (US);
Andrew L. Mcnees, Lexington, KY (US);
Christopher J. Money, Lexington, KY (US);
Girish S. Patil, Lexington, KY (US);
David B. Rhine, Georgetown, KY (US);
Karthik Vaideeswaran, Troy, NY (US);
John W. Krawczyk, Richmond, KY (US);
Andrew L. McNees, Lexington, KY (US);
Christopher J. Money, Lexington, KY (US);
Girish S. Patil, Lexington, KY (US);
David B. Rhine, Georgetown, KY (US);
Karthik Vaideeswaran, Troy, NY (US);
Lexmark International, Inc., Lexington, KY (US);
Abstract
A process for etching semiconductor substrates using a deep reactive ion etching process to produce through holes or slots (hereinafter 'slots') in the substrates. The process includes applying a first layer to a back side of a substrate as a first etch stop material. The first layer is a relatively soft etch stop material. A second layer is applied to the first layer on the back side of the substrate to provide a composite etch stop layer. The second layer is a relatively hard etch stop material. The substrate is etched from a side opposite the back side of the substrate to provide a slot in the substrate.