The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2008
Filed:
May. 07, 2007
Applicants:
Kent Kuohua Chang, Taipei, TW;
Jongoh Kim, Hsinchu, TW;
Yider Wu, Taipei, TW;
Inventors:
Assignee:
MACRONIX International Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8244 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of fabricating a memory device is described. During the process of forming the memory cell area and the periphery area of a semiconductor device a photoresist layer is formed on the memory cell area before the spacers are formed on the sidewalls of the gates. Therefore, the memory cell area is prevented from being damaged to mitigate the leakage current problem during the process of forming spacers in the periphery circuit area.