The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2008
Filed:
Jun. 07, 2006
Applicants:
Shigeru Umeno, Tokyo, JP;
Yasuhiro Oura, Tokyo, JP;
Koji Kato, Tokyo, JP;
Inventors:
Assignee:
Sumco Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C01B 33/26 (2006.01); C30B 15/20 (2006.01);
U.S. Cl.
CPC ...
Abstract
A silicon wafer for an IGBT is produced by forming an ingot having an interstitial oxygen concentration [Oi] of not more than 7.0×10atoms/cmby the Czochralski method; doping phosphorus in the ingot by neutron beam irradiation to the ingot; slicing a wafer from the ingot; performing annealing of the wafer in an oxidizing atmosphere containing at least oxygen at a temperature satisfying a predetermined formula; and forming a polysilicon layer or a strained layer on one side of the wafer.
Umeno, Shigeru. (2008). Silicon wafer for igbt and method for producing same (U.S. Patent No. 7344689). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7344689
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile