The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2008
Filed:
Jul. 17, 2006
Kazuya Nagaseki, Nirasaki, JP;
Takanori Mimura, Nirasaki, JP;
Hiroki Miyajima, Nagaokakyo, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
An etching method for forming a recess () having an opening dimension (R) of millimeter order in an object () to be etched such as a semiconductor wafer. A mask () having an opening corresponding to the recess () is formed on the object (). The object () with the mask () is placed in a processing vessel for plasma etching and etched in it using a plasma. The material of the portion around the opening of the mask () is the same as the material, for example, silicon of the object (). Hence, the recess () can be so formed as not to form a sub-trench shape (a shape formed by etching the periphery of which is deeper than the center) substantially in the bottom ().
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile