The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2008
Filed:
Apr. 08, 2005
John T. Gasner, Satellite Beach, FL (US);
John Stanton, Palm Bay, FL (US);
Dustin A. Woodbury, Indian Harbour Beach, FL (US);
James D. Beasom, Melbourne Village, FL (US);
John T. Gasner, Satellite Beach, FL (US);
John Stanton, Palm Bay, FL (US);
Dustin A. Woodbury, Indian Harbour Beach, FL (US);
James D. Beasom, Melbourne Village, FL (US);
Intersil Americas Inc., Milpitas, CA (US);
Abstract
The formation of devices in semiconductor material. In one embodiment, a method of forming a semiconductor device is provided. The method comprises forming at least one hard mask overlaying at least one layer of resistive material. Forming at least one opening to a working surface of a silicon substrate of the semiconductor device. Cleaning the semiconductor device with a diluted HF/HCL process. After cleaning with the diluted HF/HCL process, forming a silicide contact junction in the at least one of the opening to the working surface of the silicon substrate and then forming interconnect metal layers.