The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2008
Filed:
Dec. 07, 2005
Yi-jen Lo, Dresden, DE;
Axel Buerke, Dresden, DE;
Sven Schmidbauer, Dresden, DE;
Chiang-hung Lin, Dresden, DE;
Yi-Jen Lo, Dresden, DE;
Axel Buerke, Dresden, DE;
Sven Schmidbauer, Dresden, DE;
Chiang-Hung Lin, Dresden, DE;
Infineon Technologies AG, Munich, DE;
Nanya Technology Corporation, Kueishan, TW;
Abstract
A method for controlling a thickness of a first layer of an electrical contact of a semiconductor device, whereby the semiconductor device comprises a semiconductor layer, a first layer and a second layer, whereby at least a part of the semi-conductor layer is covered with the first layer, whereby at least a part of the first layer is covered with the second layer, whereby the second layer is exposed to a plasma gas, whereby an upper face of the first layer adjacent to the second layer is treated by the plasma gas and an interlayer is generated between the first and the second layer reducing the thickness of the first layer.