The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2008
Filed:
Feb. 18, 2005
Dah-chung Oweyang, Baoshan Township, Hsinchu County, TW;
Chih-cheng Lin, Baoshan Township, Hsinchu County, TW;
Hsueh-liang Hung, Yung Ho, TW;
Bang-chein Ho, Hsin-Chu, TW;
Dah-Chung Oweyang, Baoshan Township, Hsinchu County, TW;
Chih-Cheng Lin, Baoshan Township, Hsinchu County, TW;
Hsueh-Liang Hung, Yung Ho, TW;
Bang-Chein Ho, Hsin-Chu, TW;
Taiwan Semiconductor Maunfacturing Co., Ltd., Hsin-Chu, TW;
Abstract
In the manufacture of a semiconductor, a DBARC layer is deposited upon a wafer to prevent reflection. A photo resist layer is deposited upon the DBARC layer and the wafer is selectively exposed to irradiation. The irradiation generates photo acid (H+ ions) in the exposed areas of the photo resist and DBARC. In order to provide better resolution in the DBARC for micro-features, an electric field is generated vertically through the coated wafer before or during post exposure baking (PEB) to create a uniform vertical distribution of H+ ions though the DBARC. The coated wafer is then developed to remove either the unexposed portions, or exposed portion of the DBARC. The cavities formed by the developer have side walls that are substantially vertical as a result of the uniform vertical distribution of the H+ ions.