The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2008
Filed:
Jul. 09, 2004
Yang-tai Tseng, Hsinchu, TW;
Pang-shiu Chen, Hsinchu, TW;
Shin-chi LU, Hsinchu, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A method to fabricate patterned strain-relaxed SiGe epitaxial with threading dislocation density control is provided. An ion-implanting area is first defined on a silicon substrate, and then proceeds ion-implanting. Finally, a buffer layer and a SiGe epitaxial layer are deposited. According to the disclosure, an active area and a non-active area are defined through ion-implanting. Therefore, the threading dislocation occurring in the active area concentrates in the non-active area, and the density of the threading dislocation is lowered. Furthermore, the performance of the semiconductor is also enhanced.