The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2008
Filed:
Mar. 07, 2006
Hideyuki Matsuoka, Nishitokyo, JP;
Kiyoo Itoh, Higashikurume, JP;
Motoyasu Terao, Hinode, JP;
Satoru Hanzawa, Hachioji, JP;
Takeshi Sakata, Hino, JP;
Hideyuki Matsuoka, Nishitokyo, JP;
Kiyoo Itoh, Higashikurume, JP;
Motoyasu Terao, Hinode, JP;
Satoru Hanzawa, Hachioji, JP;
Takeshi Sakata, Hino, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A semiconductor memory cell and forming method thereof utilizes a vertical select transistor to eliminate the problem of a large cell surface area in memory cells of the related art utilizing phase changes. A memory cell with a smaller surface area than the DRAM device of the related art is achieved by the present invention. Besides low power consumption during read operation, the invention also provides phase change memory having low power consumption even during write operation. Phase change memory also has stable read-out operation.