The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2008
Filed:
Aug. 14, 2003
Masafumi Muramatsu, Kanagawa, JP;
Hayato Iwamoto, Kanagawa, JP;
Kazumi Asada, Kanagawa, JP;
Tomoko Suzuki, Tokyo, JP;
Toshitaka Hiraga, Kanagawa, JP;
Tetsuo Aoyama, Kanagawa, JP;
Masafumi Muramatsu, Kanagawa, JP;
Hayato Iwamoto, Kanagawa, JP;
Kazumi Asada, Kanagawa, JP;
Tomoko Suzuki, Tokyo, JP;
Toshitaka Hiraga, Kanagawa, JP;
Tetsuo Aoyama, Kanagawa, JP;
Sony Corporation, , JP;
EKC Technology K.K., , JP;
Abstract
One example of a separation-material composition for a photo-resist according to the present invention comprises 5.0 weight % of sulfamic acid, 34.7 weight % of HO, 0.3 weight % of ammonium 1-hydrogen difluoride, 30 weight % of N,N-dimethylacetamide and 30 weight % of diethylene glycol mono-n-buthyl ether. Another example of a separation-material composition for a photo-resist according to the present invention comprises 1-hydroxyethylidene-1, 3.0 weight % of 1-diphosphonic acid, 0.12 weight % of anmonium fluoride, 48.38 weight % of HO and 48.5 weight % of diethylene glycol mono-n-buthl ether. The separation-material composition for the photo-resist is mainly used for a medicinal liquid washing liquid/scientific liquid in order to remove the photo-resist residuals and the by-product polymer after an ashing process of a photo-resist mask. It can propose a separation-material composition for a photo-resist such that the photo-resist residuals and the by-product polymer are easily removed after a dry etching process and at the same time the low dielectric-constant insulation film is avoided from erosion and oxidization.