The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2008
Filed:
Jan. 26, 2005
Applicants:
Rupert Krautbauer, Mühldorf, DE;
Erich Gmeilbauer, Pantaleon, AT;
Robert Vorbuchner, Burghausen, DE;
Martin Weber, Kastl, DE;
Inventors:
Rupert Krautbauer, Mühldorf, DE;
Erich Gmeilbauer, Pantaleon, AT;
Robert Vorbuchner, Burghausen, DE;
Martin Weber, Kastl, DE;
Assignee:
Siltronic AG, Munich, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B 15/00 (2006.01); B32B 3/02 (2006.01); B32B 9/04 (2006.01); H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
The invention relates to a process for producing highly doped semiconductor wafers, in which at least two dopants which are electrically active and belong to the same group of the periodic system of the elements are used for the doping. The invention also relates to a semiconductor wafer which is free of dislocations and is doped with at least two electrically active dopants which belong to the same group of the periodic system of the elements.