The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7341775 B1

PDF
Full Text
Expired
Date of Patent:
Mar. 11, 2008

Filed:

Nov. 12, 2003
Applicants:

Yoshitaka Hamada, Niigata-ken, JP;

Fujio Yagihashi, Niigata-ken, JP;

Hideo Nakagawa, Oumihachiman, JP;

Masaru Sasago, Hirakata, JP;

Inventors:

Yoshitaka Hamada, Niigata-ken, JP;

Fujio Yagihashi, Niigata-ken, JP;

Hideo Nakagawa, Oumihachiman, JP;

Masaru Sasago, Hirakata, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
Abstract

Provided are a composition for forming film which can form a porous film excelling in dielectric constant, adhesiveness, uniformity of the film, mechanical strength and having low hygroscopicity; a porous film and a method for forming the film; and a high-performing and highly reliable semiconductor device comprising the porous film inside. More specifically, provided is a composition for forming porous film, comprising


Find Patent Forward Citations

Hamada, Yoshitaka. (2008). Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device (U.S. Patent No. 7341775). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7341775

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