The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2008
Filed:
Feb. 08, 2006
John Zhang, Palo Alto, CA (US);
Kurt Taylor, San Jose, CA (US);
Eugene Zhao, Ashburn, VA (US);
Amit Marathe, Milpitas, CA (US);
Rolf Geilenkeuser, Dresden, DE;
Joerg-oliver Weidner, Moritzburg, DE;
John Zhang, Palo Alto, CA (US);
Kurt Taylor, San Jose, CA (US);
Eugene Zhao, Ashburn, VA (US);
Amit Marathe, Milpitas, CA (US);
Rolf Geilenkeuser, Dresden, DE;
Joerg-Oliver Weidner, Moritzburg, DE;
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A method for efficiently and accurately measuring a maximum Vcalculation or failure rate and lifetime projection for microprocessors and other semiconductor products analytically scales low voltages applied to thinner oxides to thicker oxides. The expanded voltage window that is closer to the use voltage is obtained thereby to provide accurate voltage acceleration factors and max Vextraction.