The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2008
Filed:
Feb. 02, 2007
Kazunori Shinoda, Musashino, JP;
Takashi Shiota, Sagamihara, JP;
Tomonobu Tsuchiya, Hachioji, JP;
Takeshi Kitatani, Hino, JP;
Masahiro Aoki, Kokubunji, JP;
Kazunori Shinoda, Musashino, JP;
Takashi Shiota, Sagamihara, JP;
Tomonobu Tsuchiya, Hachioji, JP;
Takeshi Kitatani, Hino, JP;
Masahiro Aoki, Kokubunji, JP;
Opnext Japan, Inc., Kanagawa, JP;
Abstract
An integrated optoelectronic device includes optical waveguide elements containing InGaAlAs as a principal component, formed on an InP substrate and connected in an end-to-end fashion by butt jointing. An InGaAsP layer is formed on the InP substrate to suppress the mass transport of InP during the fabrication of the integrated optoelectronic device. The InGaAsP layer is formed before the InP substrate is heated at a crystal growth temperature on the order of 700° C. to form the InGaAlAs optical waveguide element.