The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2008
Filed:
Feb. 17, 2006
Konstantin L. Vodopyanov, San Jose, CA (US);
Yun-shik Lee, Corvallis, OR (US);
Vladimir G. Kozlov, Eugene, OR (US);
Martin M. Fejer, Menlo Park, CA (US);
Konstantin L. Vodopyanov, San Jose, CA (US);
Yun-Shik Lee, Corvallis, OR (US);
Vladimir G. Kozlov, Eugene, OR (US);
Martin M. Fejer, Menlo Park, CA (US);
Microtech Instruments Inc, Eugene, OR (US);
State of Oregon acting by and though Oregon State Board of Higher Education on behalf of Oregon State University, Corallis, OR (US);
The Board of Trustees of the Leland Stanford Junior University, Palo Alto, CA (US);
Abstract
A method for generating THz radiation comprises illuminating a semiconductor crystal with an optical pulse train. The semiconductor crystal comprises alternating parallel crystal domains, with each domain having a crystal orientation inverted with respect to adjacent domains. The optical pulse train propagates substantially perpendicularly relative to domain boundaries in the semiconductor crystal. The THz radiation is generated from the optical pulse train by optical down-conversion mediated by the semiconductor crystal. Optical path lengths through the crystal domains at least in part determine a frequency of the generated THz radiation. THz generation efficiency may be enhanced by placing the semiconductor crystal within an external resonant cavity, by placing the semiconductor crystal within a laser cavity, or by placing the semiconductor crystal within an OPO cavity. The semiconductor crystal may comprise zinc-blende, III-V, or II-VI semiconductor.