Semiconductor device having passive component and support substrate with electrodes and through electrodes passing through support substrate

Abstract

A capacitor comprises a first conducting filmformed on a substrate, a first dielectric filmformed on the first conducting film, a second conducting filmformed on the first dielectric film, a second dielectric filmformed above the second conducting film, covering the edge of the second conducting film, a third conducting filmformed above the second dielectric film, covering a part of the second dielectric film covering the edge of the second conducting film. The capacitor further comprises an insulation filmcovering the edge of the second conducing film or the part of the second dielectric film. An effective thickness of the insulation film between the second conducting film and the third conducing film in the region near the edge of the second conducting film can be increased, whereby concentration of electric fields in the region near the edge of the second conducting film. Consequently, the capacitor can have large capacitance without lowering voltage resistance.