The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2008
Filed:
Apr. 04, 2003
Kenji Kasahara, Tsukuba, JP;
Ritsuko Kawasaki, Machida, JP;
Hisashi Ohtani, Tochigi, JP;
Shunpei Yamazaki, Setagaya, JP;
Kenji Kasahara, Tsukuba, JP;
Ritsuko Kawasaki, Machida, JP;
Hisashi Ohtani, Tochigi, JP;
Shunpei Yamazaki, Setagaya, JP;
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Abstract
A laser annealing method for obtaining a crystalline semiconductor film having a large grain size is provided. Laser light is irradiated to the top surface and the bottom surface of an amorphous semiconductor film when crystallizing the amorphous semiconductor film by laser light irradiation. Furthermore, a relationship of 0<(I'/I)<1, or 1<(I′/I) is achieved for the ratio (I/I′) between the effective energy strength of the laser light when irradiated to the top surface (I) and the effective energy strength of the laser light when irradiated to the bottom surface (I′).