The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2008
Filed:
May. 14, 2003
Masashi Nakamura, Toda, JP;
Hideki Kurita, Kitaibaraki, JP;
Masashi Nakamura, Toda, JP;
Hideki Kurita, Kitaibaraki, JP;
Nippon Mining & Metals Co., Ltd., Tokyo, JP;
Abstract
An epitaxial growth method includes: supporting a substrate for growth (for example, an InP substrate) with a substrate supporter, growing a compound semiconductor layer comprising 3 or 4 elements (for example, a III-V group compound semiconductor such as an InGaAs layer, AlGaAs layer, AlInAs layer and AlInGaAs layer) on the substrate for growth by metal organic chemical vapor deposition, polishing the substrate so that an angle of gradient is 0.00° to 0.03° or 0.04° to 0.24° with respect to (100) direction in the entire effective area of the substrate, and forming the compound semiconductor layer to be 0.5 μm thick or more on the substrate by using the substrate for growth.