The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2008
Filed:
Nov. 10, 2005
Tzu-hsuan Hsu, Kaohsiung, TW;
Shou-gwo Wuu, Hsin-Chu, TW;
Ho-ching Chien, Jhudong Township, TW;
Dun-nian Yaung, Taipei, TW;
Tzu-Hsuan Hsu, Kaohsiung, TW;
Shou-Gwo Wuu, Hsin-Chu, TW;
Ho-Ching Chien, Jhudong Township, TW;
Dun-Nian Yaung, Taipei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A plurality of apertures is formed in at least one first insulating layer disposed over a sensor formed in a semiconductor substrate. A second insulating layer is disposed over the at least one first insulating layer and the plurality of apertures in the at least one first insulating layer. The apertures form hollow regions in the at least one first insulating layer over the sensor, allowing more light or energy to pass through the at least one first insulating layer to the sensor, and increasing the sensitivity of the sensor.