The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2008
Filed:
Mar. 09, 2004
Gaku Sugahara, Nara, JP;
Yasutoshi Kawaguchi, Suita, JP;
Akihiko Ishibashi, Osaka, JP;
Isao Kidoguchi, Kawanishi, JP;
Toshiya Yokogawa, Nara, JP;
Gaku Sugahara, Nara, JP;
Yasutoshi Kawaguchi, Suita, JP;
Akihiko Ishibashi, Osaka, JP;
Isao Kidoguchi, Kawanishi, JP;
Toshiya Yokogawa, Nara, JP;
Matsushita Electric Industrial Co., Ltd., Kadoma, JP;
Abstract
A method for fabricating nitride semiconductor devices according to the present invention includes the steps of: (A) providing a nitride semiconductor substrate, which will be split into chip substrates, which includes device portions that will function as the respective chip substrates when the substrate is split and interdevice portions that connect the device portions together, and in which the average thickness of the interdevice portions is smaller than the thickness of the device portions; (B) defining a masking layer, which has striped openings over the device portions, on the upper surface of the nitride semiconductor substrate; (C) selectively growing nitride semiconductor layers on portions of the upper surface of the nitride semiconductor substrate, which are exposed through the openings of the masking layer; and (D) cleaving the nitride semiconductor substrate along the interdevice portions of the nitride semiconductor substrate, thereby forming nitride semiconductor devices on the respectively split chip substrates.