The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2008
Filed:
Feb. 11, 2005
Applicants:
Yueh-you Chen, Hsin-Chu, TW;
Chung-long Chang, Dou-Liu, TW;
Chih-ping Chao, Chu-Dong Town, TW;
Chun-hong Chen, Jhubei, TW;
Inventors:
Yueh-You Chen, Hsin-Chu, TW;
Chung-Long Chang, Dou-Liu, TW;
Chih-Ping Chao, Chu-Dong Town, TW;
Chun-Hong Chen, Jhubei, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 23/495 (2006.01);
U.S. Cl.
CPC ...
Abstract
A capacitor device selectively combines MOM, MIM and varactor regions in the same layout area of an IC. Two or more types of capacitor regions arranged vertically on a substrate to form the capacitor device. This increase the capacitance per unit of the capacitor device, without occupying an extra layout area.