The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2008
Filed:
Jan. 19, 2006
I-chun Chuang, Taipei, TW;
Cheng-yuan Hsu, Hsinchu, TW;
Jui-yu Pan, Pingtung County, TW;
Powerchip Semiconductor Corp., Hsinchu, TW;
Abstract
A method for manufacturing flash memory is provided. A tunneling dielectric layer, a conductive layer and a patterned mask layer that exposes a portion of the conductive layer are formed on a substrate. An oxide layer is formed on the exposed conductive layer so that the conductive layer is partitioned through the oxide layer into blocks. The oxide layer is removed and an inter-gate dielectric layer is formed in the opening. A control gate that completely fills the opening is formed. A cap layer is formed over the control gate. The mask layer is then removed. Using the cap layer as a mask, a portion of the conductive layer is removed to form two floating gates under the control gate. An insulating layer is formed on the substrate. Source/drain regions are formed in the substrate on the respective sides of the control gate.