The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2008
Filed:
Jun. 22, 2005
Takashi Onishi, Kobe, JP;
Tatsuya Yasunaga, Kobe, JP;
Hideo Fujii, Kobe, JP;
Tetsuya Yoshikawa, Takasago, JP;
Jun Munemasa, Takasago, JP;
Takashi Onishi, Kobe, JP;
Tatsuya Yasunaga, Kobe, JP;
Hideo Fujii, Kobe, JP;
Tetsuya Yoshikawa, Takasago, JP;
Jun Munemasa, Takasago, JP;
Kobe Steel, Ltd., Kobe-shi, JP;
Abstract
Cu-based interconnections are fabricated in a semiconductor device by depositing a thin film of Cu or Cu alloy on a dielectric film by sputtering, the dielectric film having trenches and/or via holes at least one groove and being arranged on or above a substrate, and carrying out high temperature and high pressure treatment to thereby embed the Cu or Cu alloy into the trenches and/or via holes, in which the sputtering is carried out at a substrate temperature of −20° C. to 0° C. using, as a sputtering gas, a gaseous mixture containing hydrogen gas and an inert gas in a ratio in percentage of 5:95 to 20:80.