The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2008
Filed:
Jun. 17, 2005
Applicants:
Lance S. Robertson, Rockwall, TX (US);
Jiong-ping LU, Richardson, TX (US);
Donald S. Miles, Plano, TX (US);
Inventors:
Lance S. Robertson, Rockwall, TX (US);
Jiong-Ping Lu, Richardson, TX (US);
Donald S. Miles, Plano, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract
A silicideis formed in exposed silicon on a semiconductor waferby a method that includes forming a thin interface layerover the semiconductor waferand performing a first low temperature anneal to create the silicideThe method further includes removing an unreacted portion of the interface layerand performing a second low temperature anneal to complete the formation of a low resistance silicide