The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2008
Filed:
Apr. 04, 2006
Masahiro Saitoh, Fukuyama, JP;
Masahiko Yanagi, Kasaoka, JP;
Toshiyuki Tohda, Higashi Osaka, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A method of manufacturing a semiconductor memory device includes the steps of providing a gate insulating film on an active region, depositing a first conductive film on the gate insulating film, processing the first conductive film, the gate insulating film, and the active region to provide an opening of which the bottom is located below the interface between the active region and the gate insulating film and then providing a gate electrode between the openings, depositing a first insulating film which covers the side and bottom surface of the opening, depositing a second insulating film over the first insulating film, shaping the first and second insulating films into a side wall spacer shape by etching to provide charge retention sections beside the gate electrode and providing diffusion areas at opposite sides of the gate electrode beneath the charge retention sections in the active region.