The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 19, 2008

Filed:

Jul. 11, 2006
Applicants:

Akira Tanaka, Kanagawa-ken, JP;

Hideto Sugawara, Kanagawa-ken, JP;

Chie Hongo, Kanagawa-ken, JP;

Yoshiyuki Harada, Tokyo, JP;

Masaaki Onomura, Tokyo, JP;

Inventors:

Akira Tanaka, Kanagawa-ken, JP;

Hideto Sugawara, Kanagawa-ken, JP;

Chie Hongo, Kanagawa-ken, JP;

Yoshiyuki Harada, Tokyo, JP;

Masaaki Onomura, Tokyo, JP;

Assignee:

Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor laser device comprising: a first cladding layer of a first conductivity type; an active layer provided on the first cladding layer and having a quantum well structure; an overflow blocking layer of a second conductivity type provided on the overflow blocking layer. The active layer includes a region having an impurity concentration is 3×10cmor more and having a thickness of 30 nm or less between the overflow blocking layer and a well layer in the active layer closet to the overflow blocking layer.


Find Patent Forward Citations

Tanaka, Akira. (2008). Semiconductor laser device (U.S. Patent No. 7333523). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7333523

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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