The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2008
Filed:
Mar. 18, 2005
Takehiro Hasegawa, Yokohama, JP;
Akira Umezawa, Tokyo, JP;
Koji Sakui, Tokyo, JP;
Fumitaka Arai, Yokohama, JP;
Ryo Mitani, Yokosuka, JP;
Takehiro Hasegawa, Yokohama, JP;
Akira Umezawa, Tokyo, JP;
Koji Sakui, Tokyo, JP;
Fumitaka Arai, Yokohama, JP;
Ryo Mitani, Yokosuka, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor integrated circuit device includes first and second nonvolatile semiconductor memories. The first memory has first and second select transistors and first memory cell transistors. The first memory cell transistor has a first floating gate on a first gate insulating film and a first control gate on a first inter-gate insulating film. The second memory has a third select transistor and a second memory cell transistor. The second memory cell transistor has a second floating gate on a second gate insulating film and a second control gate on a second inter-gate insulating film. The first and second gate insulating films have the same film thickness. The first and second floating gates have the same film thickness. The first and second inter-gate insulating films have the same film thickness. The first and second control gates have the same film thickness.